FCP600N60Z

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FCP600N60Z datasheet

• Маркировка
  FCP600N60Z
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FCP600N60Z Continuous Drain Current: 4.7 A Drain-source Breakdown Voltage: 650 V Fall Time: 28 ns Forward Transconductance Gfs (max / Min): 6.7 S Gate Charge Qg: 26 nC Maximum Operating Temperature: + 150 C Minimum Operating Temperature: -55 C Mounting Style: Through Hole Package / Case: TO-220 Power Dissipation: 89 W Resistance Drain-source Rds (on): 600 mOhms Rise Time: 24 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 88 ns RoHS: yes Drain-Source Breakdown Voltage: 650 V Resistance Drain-Source RDS (on): 600 mOhms Forward Transconductance gFS (Max / Min): 6.7 S Typical Turn-Off Delay Time: 88 ns
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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